-bonding
states localized at the cap and pointing in the tube axis direction occur
at the Fermi level. A scaling rule for the induced field linear in the aspect ratio of
the tube is also obtained.
Seungwu Han and Jisoon Ihm
We have performed ab initio
pseudopotential electronic structure calculations for various edge geometries of the
(n,n) single-wall nanotube with or without applied fields.
Among the systems studied, the one with a zigzag edge exposed by a slant cut is found
to be the most favorable for emission due to the existence of unpaired dangling bond
states around the Fermi level.
The next most favorable geometry is the capped nanotube
where -bonding
states localized at the cap and pointing in the tube axis direction occur
at the Fermi level. A scaling rule for the induced field linear in the aspect ratio of
the tube is also obtained.
